Si-Through-HR: Infrared Transmission Microscope for Nondestructive Inspection Through Silicon Layers

Please note that we are currently accepting orders, but shipping will not start until June 2024.

Model: Si-Through-HR

Jay Photonics is pleased to introduce our latest innovation – the most affordable microscope capable of imaging millimeters deep through silicon with exceptional resolution. Our cutting-edge technology allows for better imaging through silicon than most infrared microscopes available on the market at a fraction of the price. 

With the increasing demand for stacked silicon chips and 3D silicon photonics due to their compactness and high data throughput capabilities, through silicon inspection is becoming increasingly essential. Unfortunately, available solutions are either too expensive or rely on phosphor coating technologies that significantly reduce resolution by converting infrared light into visible light.

Our microscope addresses these issues by offering an outstanding resolution. In addition, our infrared imaging technology allows for low exposure time and eliminates the need for contrast and noise optimization software, thus enabling lag-free real-time inspection.

At Jay Photonics, we are proud to offer this breakthrough technology at an affordable price, making it accessible to a wide range of customers. Our microscope is the ideal solution for those seeking exceptional imaging through silicon without compromising on quality or breaking the bank.

Typical application of the Si-Through-HR microscope:

1. Evaluation of bonding alignment, including the analysis of alignment marks among circuits that are thinly bonded, and the alignment of wafers that are bonded together.
2. Inspection following electrical testing to identify any form of failure.
3. Analysis of chip damage, encompassing defects within materials and issues related to contamination.
4. Examination of short circuits (such as burnout marks or stress indicators).
5. Inspection of microelectromechanical systems (MEMS), involving the assessment of the device's structure within a bonded wafer, the identification of voids and defects, and the capturing of real-time mechanical movements.

Specifications: